Tunable ferroelectric materials for RF- Microwave applications: high frequency properties and integration in frequency-agile devices

Abstract : Ferroelectric (FE) thin film capacitors can be a convenient technology for tuning microwave devices. The high agility of ferroelectric materials with an applied DC bias is presented to be employed for tunable systems. Existing reconfiguration solutions are based on varactor diodes, Micro-Electro-Mechanical systems (MEMS), PIN diodes, field effect transistors (FET) or on the introduction of tunable ferroelectric materials. Among these, PIN diodes present only two possible states (On/Off) and, like the FETs devices, have high power consumption. Varactor diodes present high capacitance tunability but have a very low power handling capability (although they are widely referenced for frequency tunable antennas). In this framework, two solutions with low power consumption are emerging for the conception of reconfigurable circuits: MEMS and ferroelectric materials. The potential of ferroelectric materials is evaluated within practical devices to meet the current requirements for highly reconfigurable, integrated, efficient and low power-consuming systems. In this context, the integration of agile capacitors based on ferroelectric materials within compact devices to be reconfigurable will be presented. Indeed, the high agility these materials with an applied DC bias voltage and their reasonable loss tangent values can be employed to develop tunable systems. Particularly, reconfigurable filters, phase shifters and frequency agile antennas based on different ferroelectric materials will be discussed. The characterization of their dielectric properties at RF frequencies will be presented followed by their integration inside the devices. Reconfigurable components could present either a 2D-shape, i.e. interdigital capacitors or a 3D-shape as the Metal- Ferroelectric-Metal tunable components. Designs and performances of the devices incorporating these two kinds of ferroelctric-based components will be presented and detailed.
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https://hal.archives-ouvertes.fr/hal-01223117
Contributor : Aurelian Crunteanu <>
Submitted on : Monday, November 2, 2015 - 8:14:28 AM
Last modification on : Tuesday, February 25, 2020 - 12:00:03 PM

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  • HAL Id : hal-01223117, version 1

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Laure Huitema, Valérie Madrangeas, Aurelian Crunteanu, Damien Passerieux, Dominique Cros, et al.. Tunable ferroelectric materials for RF- Microwave applications: high frequency properties and integration in frequency-agile devices. THE 8th INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS, ROCAM 2015, Jul 2015, Bucarest, Romania. ⟨hal-01223117⟩

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