Degenerate epitaxy-driven defects in monolayer silicon oxide onto ruthenium

Shashank Mathur (1, 2) , Sergio Vlaic (1, 3) , Eduardo Machado-Charry (4) , Anh-Duc Vu (1) , Valérie Guisset (5) , Philippe David (5) , Emmanuel Hadji (2) , Pascal Pochet (4) , Johann Coraux (1)

1 NEEL - Quan2m - Interactions modulables dans des états quantiques 2D
2 SiNaps - Silicon Nanoelectronics Photonics and Structures
3 LPEM - Laboratoire de Physique et d'Etude des Matériaux (UMR 8213)
4 LSIM - Laboratory of Atomistic Simulation
5 NEEL- EpiCM - Epitaxie et couches minces

The structure of the ultimately-thin crystalline allotrope of silicon oxide, prepared onto a ruthenium surface, is unveiled down to atomic scale with chemical sensitivity, thanks to high resolution scanning tunneling microscopy and first principle calculations. An ordered oxygen lattice is imaged which coexists with the two-dimensional monolayer oxide. This coexistence signals a displacive transformation from an oxygen reconstructed-Ru(0001) to silicon oxide, along which latterally-shifted domains form, each with equivalent and degenerate epitaxial relationships with the substrate. The unavoidable character of defects at boundaries between these domains appeals for the development of alternative methods capable of producing single-crystalline two-dimensional oxides.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Shashank Mathur, Sergio Vlaic, Eduardo Machado-Charry, Anh-Duc Vu, Valérie Guisset, et al.. Degenerate epitaxy-driven defects in monolayer silicon oxide onto ruthenium. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 92 (16), pp.161410(R). ⟨10.1103/PhysRevB.92.161410⟩. ⟨hal-01222011⟩