Reliability of ESD protection devices designed in a 3D technology

Bertrand Courivaud (1, 2) , Nicolas Nolhier (1) , G Ferru (2) , Marise Bafleur (1) , Fabrice Caignet (1)

1 LAAS-ESE - Équipe Énergie et Systèmes Embarqués
2 IPDiA

A 3D technology is used to design ESD protection devices. These planar bidirectional components, based on back-to-back diodes, are dedicated to first stage, external ESD protection. The main feature consists in using deep micro-holes, usually dedicated to the manufacturing of high-value capacitors, to design 3D diode. These devices present an unexpected behaviour when they are submitted to cumulative ESD stress. Finally, we propose an optimized configuration based on deep trenches that improves cumulative ESD stress robustness.

Mots clés: Trench; Back-to-back diode; ESD protection

Domaines: Micro et nanotechnologies/Microélectronique

Bertrand Courivaud, Nicolas Nolhier, G Ferru, Marise Bafleur, Fabrice Caignet. Reliability of ESD protection devices designed in a 3D technology. Microelectronics Reliability, 2014, Microelectronics Reliability, 54 (9), pp.2272-2277. ⟨10.1016/j.microrel.2014.07.136⟩. ⟨hal-01218702⟩