Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure

Anastasios I. Pateras (1, 2) , Marc Allain (1) , Pierre Godard (1) , L. Largeau (3) , G. Patriarche (3) , Anne Talneau (3) , K. Pantzas (3) , M. Burghammer (4) , A. A. Minkevich (2) , Virginie Chamard (1)

1 COMiX - Coherent Optical Microscopy and X-rays
2 KIT - Karlsruhe Institute of Technology
3 LPN - Laboratoire de photonique et de nanostructures
4 ESRF - European Synchrotron Radiation Facility

We report the 3D mapping of strain and tilts of crystal planes in an extended InP nanostructured layer bonded onto silicon, measured without sample preparation. Our approach takes advantages of 3D x-ray Bragg ptychography combined to an optimized inversion process. The excellent agreement with the sample nominal structure validates the reconstruction while the evidence of spatial fluctuations hardly observable by other means, underlines the specificities of Bragg ptychography.

Mots clés: semiconductor heterostructures; Bragg ptychography

Domaines: Traitement du signal et de l'image [eess.SP]; Micro et nanotechnologies/Microélectronique; Optique [physics.optics]; Optique / photonique

Anastasios I. Pateras, Marc Allain, Pierre Godard, L. Largeau, G. Patriarche, et al.. Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 92 (20), pp.205305. ⟨10.1103/PhysRevB.92.205305⟩. ⟨hal-01218363v2⟩