Working point of the EFG process - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Crystal Research and Technology Année : 2015

Working point of the EFG process

Résumé

A theoretical investigation of the EFG process working point based on the meniscus height control is carried out. The link between the two control parameters, which are the pulling rate and the upper die temperature, is found from the thermal equilibrium at the crystallization interface. Using the pressure equilibrium in the film and considering the meniscus shape, the change in meniscus height depending on the crystal radius is analyzed. Limited to small crystal radii, an algebraic formulation of the temperature gradient at the interface is established. Some die design parameters are taken into account and their impacts on the process working point are discussed.

Domaines

Matériaux

Dates et versions

hal-01211315 , version 1 (04-10-2015)

Identifiants

Citer

L. Carroz, T. Duffar. Working point of the EFG process. Crystal Research and Technology, 2015, 50 (6), pp.473-481. ⟨10.1002/crat.201500021⟩. ⟨hal-01211315⟩
66 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More