Magnetoresistance of disordered graphene: From low to high temperatures

Bilal Jabakhanji (1) , D. Kazazis (2) , Wilfried Desrat (1) , A. Michon (3) , M. Portail (3) , Benoit Jouault (1)

1 L2C - Laboratoire Charles Coulomb
2 LPN - Laboratoire de photonique et de nanostructures
3 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications

We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from T=1.7 K up to room temperature. The MR exhibits a maximum in the temperature range 120–240 K. The maximum is observed at intermediate magnetic fields (B=2–6 T), in between the weak localization and the Shubnikov-de Haas regimes. It results from the competition of two mechanisms. First, the low-field magnetoresistance increases continuously with T and has a purely classical origin. This positive MR is induced by thermal averaging and finds its physical origin in the energy dependence of the mobility around the Fermi energy. Second, the high-field negative MR originates from the electron-electron interaction (EEI). The transition from the diffusive to the ballistic regime is observed. The amplitude of the EEI correction points towards the coexistence of both long- and short-range disorder in these samples.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Bilal Jabakhanji, D. Kazazis, Wilfried Desrat, A. Michon, M. Portail, et al.. Magnetoresistance of disordered graphene: From low to high temperatures. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90 (3), pp.035423. ⟨10.1103/PhysRevB.90.035423⟩. ⟨hal-01208536⟩