Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

Suresh Sundaram (1) , Youssef El Gmili (2) , Renaud Puybaret (2) , Li X. , P.L. Bonanno (2) , Konstantinos Pantzas (3) , Gilles Patriarche (3) , Paul L. Voss , Jean-Paul Salvestrini (1) , Abdallah Ougazzaden (2)

1 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
2 Georgia Tech Lorraine [Metz]
3 LPN - Laboratoire de photonique et de nanostructures

We report the metal organic chemical vapor deposition growth of dislocation-free 100nm thick hexagonal InGaN nanopyramid arrays with up to 33% of indium content by nano-selective area growth on patterned AlN/Si (111) substrates. InGaN grown on SiO 2 patterned templates exhibit high selectivity. Their single crystal structure is confirmed by scanning transmission electron microscope combined with an energy dispersive X-ray analysis, which also reveals the absence of threading dislocations in the InGaN nanopyramids due to elastic strain relaxation mechanisms. Cathodoluminescence measurements on a single InGaN nanopyramid clearly show an improvement of the optical properties when compared to planar InGaN grown under the same conditions. The good structural, morphological, and optical quality of the InGaN nanostructures grown on AlN/Si indicates that the nano-selective area growth technology is attractive for the realization of site-controlled indium-rich InGaN nanostructure-based devices and can also be transferred to other highly mismatched substrates.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Suresh Sundaram, Youssef El Gmili, Renaud Puybaret, Li X., P.L. Bonanno, et al.. Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates. Applied Physics Letters, 2015, 107 (113105), ⟨10.1063/1.4931132⟩. ⟨hal-01203766⟩