Study of Low Frequency Noise in Vertical NW-Tunnel FETs with Different Source Compositions
Résumé
This work studies the low frequency noise (LFN)
behaviour of vertical nanowire Tunnel-FETs (NW-TFETs) with
Si or Ge sources, where the latter devices have different HfO2
thicknesses (2nm and 3nm) in the gate stack. The presence of Ge
in the source yields an increase in the current noise power
spectral density (Sid) at low frequency, while Sid is reduced for
the thinner HfO2, due to the reduction of the oxide trap density.
The experimental noise behaviour can be explained by the
standard Sid model for MOSFETs, when replacing the effective
gate length (Leff) by the tunneling length (LT).