Explicit modelling of the double-gate MOSFET with VHDL-AMS

Abstract : This paper presents a new compact model for the undoped, long-channel double-gate (DG) MOSFET under symmetrical operation. In particular, we propose a robust algorithm for computing the mobile charge density as an explicit function of the terminal voltages. It allows to greatly reduce the computation time without losing any accuracy. In order to validate the analytical model, we have also developed the 2D simulations of a DG MOSFET structure and performed both static and dynamic electrical simulations of the device. Comparisons with the 2D numerical simulations give evidence for the good behaviour and the accuracy of the model. Finally, we present the VHDL-AMS code of the DG MOSFET model and related simulation results.
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https://hal.archives-ouvertes.fr/hal-01195871
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Submitted on : Tuesday, September 8, 2015 - 3:56:05 PM
Last modification on : Thursday, March 21, 2019 - 1:10:49 PM

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Fabien Prégaldiny, François Krummenacher, Birahim Diagne, François Pêcheux, Christophe Lallement, et al.. Explicit modelling of the double-gate MOSFET with VHDL-AMS. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Wiley, 2006, 19 (3), pp.239-256. ⟨10.1002/jnm.609⟩. ⟨hal-01195871⟩

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