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Communication Dans Un Congrès Année : 2015

Enabling high switching speed for diamond power transistors

Résumé

Diamond transistors with great perspectives in power electronics have been presented in the literature. Metal Oxide Diamond interfaces have also been further investigated as in and are currently being transferred to isolated gate Field Effect power Transistor architectures. Such High Voltage diamond transistors are expected to have both a lower specific ON state resistance and a higher switching speed capability. To enable a high switching speed and in the view of reducing switching losses with diamond power transistors, two key elements are introduced: at the device level, higher dV/dt capability generates new constraints on the transistor architecture. At the gate driver level, both higher dV/dt immunity and a close integration with the diamond transistor are required. As a result, the CMOS gate driver will have to operate at higher temperatures and offer unique gate signal isolation solutions, such as proposed in the literature. In this context, simulation results of preliminary diamond power transistors are presented. Design and experimental characterization of novel CMOS gate drivers allowing high switching speed for power transistors are described.
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Dates et versions

hal-01176598 , version 1 (15-07-2015)

Identifiants

  • HAL Id : hal-01176598 , version 1

Citer

Nicolas Clément, Jean-Paul Rouger, Aurélien Maréchal, Thanh Long Le, Davy Colin, Julien Pernot, et al.. Enabling high switching speed for diamond power transistors. 3rd French-Japanese workshop on Diamond Power Device, Jul 2015, France. ⟨hal-01176598⟩
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