Epitaxial growth of gallium oxide films on c-cut sapphire substrate

W Seiler (1) , M Selmane (2) , K Abdelouhadi (2) , Jacques Perrière (2)

1 PIMM - Laboratoire Procédés et Ingénierie en Mécanique et Matériaux
2 INSP - Institut des Nanosciences de Paris

The nature of the crystalline phase present in gallium oxide films grown by pulsed-laser deposition on c-cut sapphire substrate has been studied. Amorphous, polycrystalline or epitaxial gallium oxide films can be obtained depending upon the oxygen pressure during the growth in the 400–500 °C temperature range. Detailed pole figure measurements on epitaxial films demonstrate that the monoclinic β-Ga2O3 phase grows epitaxially on c-cut sapphire substrates at T = 500 °C under a 10− 5 mbar oxygen pressure. Two distinct textures were evidenced, i.e., the (View the MathML source2¯01) and (101) planes of the monoclinic β-Ga2O3 phase being parallel to the c-cut sapphire substrates. The corresponding epitaxial relationships were determined and interpreted in the frame of the domain matching epitaxy. The differences in the two textures were correlated to the various atomic configurations in the (View the MathML source2¯01) and (101) planes of the monoclinic β-Ga2O3 phase.

Mots clés: Gallium oxide; Laser ablation; X-ray diffraction; epitaxial relationships; growth models

Domaines: Physique [physics]

W Seiler, M Selmane, K Abdelouhadi, Jacques Perrière. Epitaxial growth of gallium oxide films on c-cut sapphire substrate. Thin Solid Films, 2015, 589, pp.556-562. ⟨10.1016/j.tsf.2015.06.034⟩. ⟨hal-01176237⟩