Optical properties of InGaAs films embedded in plasma etched InP wells.

A. Georgakilas (1) , Christou A. (1) , Pierre Lefebvre (2) , Jacques Allègre (2) , K. Zekentes (3) , G Halkias (3)

1 ECE - University of Maryland - Department of Electrical and Computer Engineering [Univ. of Maryland]
2 GES - Groupe d'étude des semiconducteurs
3 Institute of Electronic Structure & Laser

The optical properties of InGaAs films grown in plasmaetchedInP wells by molecular beam epitaxy have been investigated and compared to the properties of similar films grown on nonpatterned InP substrates. The excitonic features of the photoluminescence spectra were maintained for the selectively grown well films.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique [physics.optics]; Micro et nanotechnologies/Microélectronique; Optique / photonique

A. Georgakilas, Christou A., Pierre Lefebvre, Jacques Allègre, K. Zekentes, et al.. Optical properties of InGaAs films embedded in plasma etched InP wells.. Applied Physics Letters, 1992, 61 (7), pp.798. ⟨10.1063/1.107805⟩. ⟨hal-01176049⟩