Valence-band coupling in thin (Ga,In)As-AlAs strained quantum wells. - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 1991

Valence-band coupling in thin (Ga,In)As-AlAs strained quantum wells.

Résumé

Model representations of varying complexity are used to describe the band structure of semiconductor quantum wells and superlattices. However, the physics of valence-band-confined states is usually restricted to the upper Γv8 band. We report spectroscopic measurements of the light- to heavy-hole splitting in (Ga,In)As-AlAs strained multiple quantum wells. The results are compared to two types of theoretical calculations: (i) within the framework of the usual approximations, and (ii) taking account of the Γv7 split-off states, which are mixed with the light-hole ones. We demonstrate the crucial influence of the valence-band coupling, by a significant improvement of the agreement between theory and experiments. Competitive effects of thicknesses, potential-well depths, and magnitude of the Γv−8Γv7 splitting are detailed and discussed.
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hal-01175678 , version 1 (11-07-2015)

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Bernard Gil, Pierre Lefebvre, P. Boring, Karen J. Moore, Geoffrey Duggan, et al.. Valence-band coupling in thin (Ga,In)As-AlAs strained quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1991, 44 (4), pp.1942. ⟨10.1103/PhysRevB.44.1942⟩. ⟨hal-01175678⟩
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