Band offset and lattice mismatch effects in strained-layer CdTe-ZnTe superlattices.

Henry Mathieu (1) , Jacques Allègre (1) , A Chatt (1) , Pierre Lefebvre (1) , Jp Faurie (2)

1 GES - Groupe d'étude des semiconducteurs
2 University of Illinois, Chicago

We present a detailed investigation of the combined effects of band offsets and lattice mismatch on the subband structure of strained-layer CdTe/ZnTe superlattices. It is shown that, depending on the layer thicknesses, the superlattice may either have a type-I configuration, where electron and hole are mostly localized within CdTe layers, or a type-II configuration. Moreover, the hole ground state may either be the heavy-hole subband or the light-hole one. The results are compared with photoluminescence data and the value ΔEv=60±20 meV is obtained for the zero-strain valence-band offset.

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique [physics.optics]; Micro et nanotechnologies/Microélectronique; Optique / photonique

Henry Mathieu, Jacques Allègre, A Chatt, Pierre Lefebvre, Jp Faurie. Band offset and lattice mismatch effects in strained-layer CdTe-ZnTe superlattices.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1988, 38 (11), pp.9. ⟨10.1103/PhysRevB.38.7740⟩. ⟨hal-01175590⟩