Magnetoexcitons in a narrow single GaAs-Ga0.5Al0.5As quantum well grown by Molecular Beam Epitaxy.

Pierre Lefebvre (1) , Bernard Gil (1) , J.P Lascaray (1) , Henry Mathieu (1) , Dieter Bimberg (2) , T. Fukunaga (3) , H. Nakashima (3)

1 GES - Groupe d'étude des semiconducteurs
2 IFKP - Institut für Festkörperphysik
3 Optoelectronics Joint Research Laboratory

We present a series of magnetoreflectance investigations performed at liquid-helium temperature and up to 55 kG in the Faraday configuration for a narrow single GaAs-Ga0.5Al0.5As quantum well (width around 79 Å). Both right-hand and left-hand circularly polarized magnetoexciton polaritons have been selected for the heavy-hole- and light-hole-related transitions. From the experimental data, taking into account the electron-hole exchange interaction, we could obtain the diamagnetic shifts of both the light-hole and the heavy-hole excitons. We measured an enhancement of the electron Landé factor (gc=-6.8±0.2) and a weak influence of the two-dimensional confinement on the valence-band Luttinger parameter (κ=1.37±0.13).

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Optique [physics.optics]; Micro et nanotechnologies/Microélectronique; Optique / photonique

Pierre Lefebvre, Bernard Gil, J.P Lascaray, Henry Mathieu, Dieter Bimberg, et al.. Magnetoexcitons in a narrow single GaAs-Ga0.5Al0.5As quantum well grown by Molecular Beam Epitaxy.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1988, 37 (8), pp.4171. ⟨10.1103/PhysRevB.37.4171⟩. ⟨hal-01175578⟩