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Bandgap energy bowing parameter of strained and relaxed InGaN layers,

Abstract : This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed InxGa1−xN layers. Samples are grown by metal organic vapor phase epitaxy on GaN template substrate for indium compositions in the range of 0
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https://hal.archives-ouvertes.fr/hal-01170545
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Submitted on : Wednesday, July 1, 2015 - 4:49:11 PM
Last modification on : Thursday, February 25, 2021 - 10:24:02 AM

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Gaëlle Orsal, Youssef El Gmili, Nicolas Fressengeas, Jérémy Streque, Ryad Djerboub, et al.. Bandgap energy bowing parameter of strained and relaxed InGaN layers,. Optical Materials Express, OSA pub, 2014, 4 (5), pp.1030-1041. ⟨10.1364/OME.4.001030⟩. ⟨hal-01170545⟩

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