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Bandgap energy bowing parameter of strained and relaxed InGaN layers,
Abstract : This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed InxGa1−xN layers. Samples are grown by metal organic vapor phase epitaxy on GaN template substrate for indium compositions in the range of 0
https://hal.archives-ouvertes.fr/hal-01170545
Contributor : Jean Paul Salvestrini Connect in order to contact the contributor
Submitted on : Tuesday, June 22, 2021 - 11:37:21 AM
Last modification on : Friday, March 4, 2022 - 3:02:02 PM
Long-term archiving on: : Thursday, September 23, 2021 - 6:22:27 PM
Contributor : Jean Paul Salvestrini Connect in order to contact the contributor
Submitted on : Tuesday, June 22, 2021 - 11:37:21 AM
Last modification on : Friday, March 4, 2022 - 3:02:02 PM
Long-term archiving on: : Thursday, September 23, 2021 - 6:22:27 PM
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