Skip to Main content Skip to Navigation
Journal articles

Bandgap energy bowing parameter of strained and relaxed InGaN layers,

Gaëlle Orsal 1 Youssef El Gmili 2 Nicolas Fressengeas 1 Jérémy Streque 2 Ryad Djerboub 1 Tarik Moudakir 2 Sundaram Suresh 2 Abdallah Ougazzaden 2 Jean-Paul Salvestrini 1
1 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
2 Georgia Tech Lorraine [Metz]
Abstract : This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed InxGa1−xN layers. Samples are grown by metal organic vapor phase epitaxy on GaN template substrate for indium compositions in the range of 0
Keywords : Thin films optical properties Instrumentation measurement and metrology
Document type :
Journal articles
Complete list of metadatas
https://hal.archives-ouvertes.fr/hal-01170545
Contributor : Jean Paul Salvestrini <>
Submitted on : Wednesday, July 1, 2015 - 4:49:11 PM
Last modification on : Thursday, February 25, 2021 - 10:24:02 AM

Links full text

openaccess

Identifiers

Collections

CNRS | UNIV-FCOMTE | SUPELEC | UMI-GTL | LMOPS-AXE1 | UNIV-LORRAINE | LMOPS-MATERIAUX | SUP_LMOPS

Citation

Gaëlle Orsal, Youssef El Gmili, Nicolas Fressengeas, Jérémy Streque, Ryad Djerboub, et al.. Bandgap energy bowing parameter of strained and relaxed InGaN layers,. Optical Materials Express, OSA pub, 2014, 4 (5), pp.1030-1041. ⟨10.1364/OME.4.001030⟩. ⟨hal-01170545⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

334