Bandgap energy bowing parameter of strained and relaxed InGaN layers,

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https://hal.archives-ouvertes.fr/hal-01170545
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Submitted on : Wednesday, July 1, 2015 - 4:49:11 PM
Last modification on : Monday, January 20, 2020 - 3:18:22 PM

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Gaëlle Orsal, Youssef El Gmili, Nicolas Fressengeas, Jérémy Streque, Ryad Djerboub, et al.. Bandgap energy bowing parameter of strained and relaxed InGaN layers,. Optical Materials Express, OSA pub, 2014, 4, pp.1030-1041. ⟨hal-01170545⟩

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