Bandgap energy bowing parameter of strained and relaxed InGaN layers,

Gaëlle Orsal 1 Youssef El Gmili 2 Nicolas Fressengeas 1 Jérémy Streque 2 Ryad Djerboub 1 Tarik Moudakir 2 Sundaram Suresh 2 Abdallah Ougazzaden 2 Jean-Paul Salvestrini 1
1 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
2 UMI2958 - Georgia Tech - CNRS [Metz]
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Journal articles
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https://hal.archives-ouvertes.fr/hal-01170545
Contributor : Jean Paul Salvestrini <>
Submitted on : Wednesday, July 1, 2015 - 4:49:11 PM
Last modification on : Monday, January 20, 2020 - 3:18:22 PM

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CNRS | UNIV-FCOMTE | SUPELEC | UMI-GTL | LMOPS-AXE1 | UNIV-LORRAINE | LMOPS-MATERIAUX | UNIV-PARIS-SACLAY

Citation

Gaëlle Orsal, Youssef El Gmili, Nicolas Fressengeas, Jérémy Streque, Ryad Djerboub, et al.. Bandgap energy bowing parameter of strained and relaxed InGaN layers,. Optical Materials Express, OSA pub, 2014, 4, pp.1030-1041. ⟨hal-01170545⟩

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