Bandgap energy bowing parameter of strained and relaxed InGaN layers,

Gaëlle Orsal (1) , Youssef El Gmili (2) , Nicolas Fressengeas (1) , Jérémy Streque (2) , Ryad Djerboub (1) , Tarik Moudakir (2) , Sundaram Suresh (2) , Abdallah Ougazzaden (2) , Jean-Paul Salvestrini (1)

1 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
2 Georgia Tech Lorraine [Metz]

This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed InxGa1−xN layers. Samples are grown by metal organic vapor phase epitaxy on GaN template substrate for indium compositions in the range of 0

Mots clés: Thin films; optical properties; Instrumentation; measurement and metrology

Domaines: Optique [physics.optics]; Science des matériaux [cond-mat.mtrl-sci]

Gaëlle Orsal, Youssef El Gmili, Nicolas Fressengeas, Jérémy Streque, Ryad Djerboub, et al.. Bandgap energy bowing parameter of strained and relaxed InGaN layers,. Optical Materials Express, 2014, 4 (5), pp.1030-1041. ⟨10.1364/OME.4.001030⟩. ⟨hal-01170545⟩