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New 3D-TRL structures for on-wafer calibration for high frequency S-parameter measurement

Abstract : This paper presents new 3D-TRL structures for the THROUGH and the LINE standard for on-wafer calibration. Thanks to these structures the reference plane after calibration is defined at the lowest metal layer of the Back-End-of-Line for a given Silicon technology, so very close to the device under test. Results for transit frequency characterization of a hetero-junction bipolar transistor (HBT) are compared to standard calibration and deembedding techniques. We show that the use of the new structures gives the most accurate results. In addition, less test structures are needed and the results are more robust and less noisy.
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Conference papers
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https://hal.archives-ouvertes.fr/hal-01163593
Contributor : Arnaud Curutchet <>
Submitted on : Monday, June 15, 2015 - 9:39:02 AM
Last modification on : Thursday, January 11, 2018 - 6:21:09 AM

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  • HAL Id : hal-01163593, version 1

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Manuel Potereau, Sebastien Fregonese, Arnaud Curutchet, Peter Baureis, Thomas Zimmer. New 3D-TRL structures for on-wafer calibration for high frequency S-parameter measurement. EUMW2015, Sep 2015, PARIS, France. ⟨hal-01163593⟩

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