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Communication Dans Un Congrès Année : 2015

Towards amplifier design with a SiC graphene field-effect transistor

Résumé

A power amplifier is implemented using a SiC Graphene Field-Effect Transistor. The amplifier gain is enhanced using an input matching LC circuit, which is connected to the GFET through standard RF probes. Experimental measurements and ADS-simulation based on developed models are used for the evaluation of the performances of the SiC GFET-based amplifier. It has been shown that a power gain of 4.8 dB can be achieved at 2.4 GHz using the GFET and the matching circuit assembly. Technology parameters are studied towards the improvement of the amplifier's figures of merit.
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Dates et versions

hal-01158691 , version 1 (01-06-2015)

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Jorgue Daniel Aguirre-Morales, Sébastien Frégonèse, Arun Dev Dhar Dwivedi, Thomas Zimmer, Mohamed Salah Khenissa, et al.. Towards amplifier design with a SiC graphene field-effect transistor. Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on, Jan 2015, Bologna, Italy. ⟨10.1109/ULIS.2015.7063781⟩. ⟨hal-01158691⟩
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