Optical near field in silicon photonics

Rafael Salas-Montiel (1) , Aniello Apuzzo (1) , Aurélien Bruyant (1) , Pascal Royer (1) , Gilles Lerondel (1) , Sylvain Blaize (1)

1 LNIO - Laboratoire de Nanotechnologie et d'Instrumentation Optique

Optical devices based on SOI have been fabricated and tested for the last decade by using far field optics. Alternatively, near-field scanning optical microscopes (NSOM) have the ability to reach unique optical resolution by converting the evanescent waves into radiation waves that can be detected by conventional far field optics. Thus, the aim of this paper is to show the most recent capabilities of the NSOM in a guided detection to probe SOI-based structures. By using this simple yet powerful configuration, we can observe the propagation of the light in Si-based devices and thus measure the propagation characteristics of the guided modes.

Mots clés: Si photonics; nanophotonics; transnom; apertureless snom; LDOS

Domaines: Optique / photonique

Rafael Salas-Montiel, Aniello Apuzzo, Aurélien Bruyant, Pascal Royer, Gilles Lerondel, et al.. Optical near field in silicon photonics. SPIE OPTO 2011, 2011, San Francisco, California, United States. pp.79430S, ⟨10.1117/12.875235⟩. ⟨hal-01151977⟩