Characterization and modeling of Schottky diodes based on bulk GaN unintentionally doped

Abstract : In this paper, we have studied Au/n-GaN Schottky diodes. The substrates are realized on bulk GaN.The current-voltage (I-V) and capacitance–voltage (C–V) of Au/n-GaN structures were investigated at roomtemperature. The electrical parameters such as saturation current I0 (1.98 ×10−7 A), ideality factor n (1.02),barrier height φbn (0.65 eV) and series resistance Rs (84 Ω) were evaluated from I–V experimental data. Thecharacteristics in these data structures Schottky Au/n-GaN can help to highlight the main conductionmechanisms observed. In addition to the thermionic current present in our structures, the leakage currentintervenes too. The barrier height and doping determined from the (C-V) characteristic are of the order of1.17 eV and 8.16 × 1016 cm-3, respectively. The average density of surface states Nss determined set to1.09 × 1012 eV-1 cm-2.
Keywords : Schottky Diode GaN
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Submitted on : Thursday, May 7, 2015 - 2:42:28 PM
Last modification on : Thursday, February 7, 2019 - 4:43:06 PM

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  • HAL Id : hal-01149661, version 1

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R. Khelifi, H. Mazari, S. Mansouri, Z. Benamara, M. Mostefaoui, et al.. Characterization and modeling of Schottky diodes based on bulk GaN unintentionally doped. Sensors and Transducers, 2014, 27, pp.217. ⟨hal-01149661⟩

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