Leakage Current and Reliability on Planar High-k Capacitor with Al2O3 Dielectric Deposited by Thermal-ALD

Sandrine Madassamy (1, 2, 3, 4) , Frédéric Voiron (1) , A. P. Nguyen (1, 2) , Aude Lefèvre (2) , Guy Parat (2) , Denis Buttard (3) , Alain Sylvestre (4)

1 IPDiA
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 SiNaps - Silicon Nanoelectronics Photonics and Structures
4 G2ELab - Laboratoire de Génie Electrique de Grenoble

Domaines: Energie électrique

Sandrine Madassamy, Frédéric Voiron, A. P. Nguyen, Aude Lefèvre, Guy Parat, et al.. Leakage Current and Reliability on Planar High-k Capacitor with Al2O3 Dielectric Deposited by Thermal-ALD. Materials Research Society (MRS) Spring Meeting, Apr 2015, San Francisco, United States. ⟨hal-01148255⟩