Laser-induced forward transfer of a bis-pyrene compound for OTFTs

Catalin Constantinescu (1) , Abdou Karim Diallo , Anthony d'Aléo (2) , Fréderic Fages (2, 3) , Christine Videlot-Ackermann (2) , Philippe Delaporte (1) , Anne-Patricia Alloncle (1)

1 LP3 - Laboratoire Lasers, Plasmas et Procédés photoniques
2 CINaM - Centre Interdisciplinaire de Nanoscience de Marseille
3 AMU - Aix Marseille Université

We present results on a newly synthesized bis-pyrene compound that, besides the typical fluorescence, also exhibits semiconducting properties. Thin films have been grown by vacuum thermal evaporation on oxidized silicon and on transparent quartz substrates. Micrometric-sized pixels have subsequently been printed by laser-induced forward transfer (LIFT), in air and at low pressure (90 mbar), by using a Nd:YAG laser source (355 nm, 50 ps pulse duration) to produce functional organic thin film transistors (o-TFTs). Top-contact (TC) configurations are emphasized, and the influence of the pressure and laser fluence during the LIFT procedure is discussed. (C) 2014 Elsevier B.V. All rights reserved.

Domaines: Optique / photonique

Catalin Constantinescu, Abdou Karim Diallo, Anthony d'Aléo, Fréderic Fages, Christine Videlot-Ackermann, et al.. Laser-induced forward transfer of a bis-pyrene compound for OTFTs. Applied Surface Science, 2015, 336, pp.133-137. ⟨10.1016/j.apsusc.2014.10.037⟩. ⟨hal-01418512⟩