Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2010

Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films

Résumé

Articles you may be interested in Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films J. Appl. Phys. 115, 163704 (2014); 10.1063/1.4873957 Elevated temperature dependent transport properties of phosphorus and arsenic doped zinc oxide thin films J. Appl. Phys. 114, 223709 (2013); 10.1063/1.4845855 Improvement of (004) texturing by slow growth of Nd doped TiO2 films J. Appl. Phys. 112, 113505 (2012); 10.1063/1.4767361 Visible light emission and energy transfer processes in Sm-doped nitride films J. Appl. Phys. 111, 123105 (2012); 10.1063/1.4729911 Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering J. Appl. Phys. 106, 073709 (2009) Gallium oxide and more particularly ␤-Ga 2 O 3 matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation/emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.
Fichier principal
Vignette du fichier
Podhorodecki_jap_2010.pdf (1.04 Mo) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Loading...

Dates et versions

hal-01139768 , version 1 (07-04-2015)

Licence

Paternité - Pas d'utilisation commerciale - Pas de modification

Identifiants

Citer

A Podhorodecki, M Banski, J Misiewicz, Céline Lecerf, P Marie, et al.. Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films. Journal of Applied Physics, 2010, 108 (6), pp.063535. ⟨10.1063/1.3484039⟩. ⟨hal-01139768⟩
835 Consultations
136 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More