S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang et al., Electric Field Effect in Atomically Thin Carbon Films, Science, vol.306, issue.5696, pp.666-669, 2004.
DOI : 10.1126/science.1102896

. Schwierz, Graphene transistors, Nature Nanotechnology, vol.36, issue.7, pp.487-496, 2010.
DOI : 10.1038/nnano.2010.89

A. Radisavljevic, J. Radenovic, V. Brivio, A. Giacometti, and . Kis, Single-layer MoS2 transistors, Nature Nanotechnology, vol.5, issue.3, pp.147-150, 2011.
DOI : 10.1038/nnano.2010.279

URL : http://infoscience.epfl.ch/record/164049

H. S. Chhowalla, G. Shin, L. Eda, K. P. Li, H. Loh et al., The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets, Nature Chemistry, vol.12, issue.4, pp.263-275, 2013.
DOI : 10.1038/nchem.1589

T. Xia, Y. Mueller, A. Lin, P. Valdes-garcia, and . Avouris, Ultrafast graphene photodetector, Nature Nanotechnology, vol.3, issue.12, pp.839-843, 2009.
DOI : 10.1038/nnano.2009.292

URL : http://arxiv.org/abs/0912.4794

F. Mueller, P. Xia, and . Avouris, Graphene photodetectors for high-speed optical communications, Nature Photonics, vol.10, issue.5, pp.297-301, 2010.
DOI : 10.1038/nphoton.2010.40

J. K. Zhang, C. H. Huang, Y. H. Chen, Y. J. Chang, L. J. Cheng et al., Monolayer, Advanced Materials, vol.12, issue.25, pp.3456-3461, 2013.
DOI : 10.1002/adma.201301244

URL : https://hal.archives-ouvertes.fr/hal-00922188

A. L. Perea-lópez, A. Elías, A. Berkdemir, H. R. Castro-beltran, S. Gutiérrez et al., Films, Advanced Functional Materials, vol.84, issue.44, pp.5511-5517, 2013.
DOI : 10.1002/adfm.201300760

D. Lopez-sanchez, M. Lembke, A. Kayci, A. Radenovic, and . Kis, Ultrasensitive photodetectors based on monolayer MoS2, Nature Nanotechnology, vol.6, issue.7, pp.497-501, 2013.
DOI : 10.1038/nnano.2013.100

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea et al., Hybrid graphene???quantum dot phototransistors with ultrahigh gain, Nature Nanotechnology, vol.7, issue.6, pp.363-368, 2012.
DOI : 10.1063/1.3243690

M. Roy, S. Padmanabhan, T. P. Goswami, G. Sai, S. Ramalingam et al., Graphene???MoS2 hybrid structures for multifunctional photoresponsive memory devices, Nature Nanotechnology, vol.16, issue.11, pp.826-830, 2013.
DOI : 10.1038/nnano.2013.206

L. Lei, S. Ge, A. Najmaei, R. George, J. Kappera et al., Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe, ACS Nano, vol.8, issue.2, pp.1263-1272, 2014.
DOI : 10.1021/nn405036u

I. V. Geim and . Grigorieva, Van der Waals heterostructures, Nature, vol.72, issue.7459, pp.419-425, 2013.
DOI : 10.1038/nature12385

URL : http://arxiv.org/abs/1307.6718

S. Böhm, Graphene against corrosion, Nature Nanotechnology, vol.1, issue.10, pp.741-742, 2014.
DOI : 10.1021/nn203507y

S. H. Huh, J. H. Kim, S. Y. Chu, J. H. Kim, S. Kim et al., Enhancement of seawater corrosion resistance in copper using acetone-derived graphene coating, Nanoscale, vol.23, issue.8, pp.4379-4386, 2014.
DOI : 10.1039/C3NR05997A

A. Shukla, R. Kumar, J. Mazher, and A. Balan, Graphene made easy: High quality, large-area samples, Solid State Communications, vol.149, issue.17-18, pp.718-721, 2009.
DOI : 10.1016/j.ssc.2009.02.007

URL : https://hal.archives-ouvertes.fr/hal-00644421

M. Gacem, Z. Boukhicha, A. Chen, and . Shukla, High quality 2D crystals made by anodic bonding: a general technique for layered materials, Nanotechnology, vol.23, issue.50, p.505709, 2012.
DOI : 10.1088/0957-4484/23/50/505709

URL : https://hal.archives-ouvertes.fr/hal-01053374

F. Schneider, V. E. Calado, H. Zandbergen, L. M. Vandersypen, and C. Dekker, Wedging Transfer of Nanostructures, Nano Letters, vol.10, issue.5, pp.1912-1916, 2010.
DOI : 10.1021/nl1008037

S. Ikari, K. Shigetomi, and . Hashimoto, Crystal Structure and Raman Spectra of InSe, physica status solidi (b), vol.34, issue.2, pp.477-481, 1982.
DOI : 10.1002/pssb.2221110208

M. Mancini, G. Micocci, and A. Rizzo, New materials for optoelectronic devices: Growth and characterization of indium and gallium chalcogenide layer compounds, Materials Chemistry and Physics, vol.9, issue.1-3, pp.29-54, 1983.
DOI : 10.1016/0254-0584(82)90006-2

S. Carlone, H. R. Jandl, and . Shanks, Optical Phonons and Crystalline Symmetry of InSe, physica status solidi (b), vol.5, issue.1, pp.123-130, 1981.
DOI : 10.1002/pssb.2221030112

M. Atakishiev, D. Sh, G. A. Abdinov, and . Akhundov, Heat Conductivity of Indium Selenide, Physica Status Solidi (b), vol.1, issue.1, pp.47-50, 1968.
DOI : 10.1002/pssb.19680280157

Q. Yan, W. Zhang, I. Li, T. Calizo, C. A. Shen et al., Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy, Applied Physics Letters, vol.101, issue.2, p.22105, 2012.
DOI : 10.1063/1.4734955

Z. Sun, J. Liu, G. A. Li, S. P. Tai, F. Lau et al., Infrared Photodetectors Based on CVD-Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity, Advanced Materials, vol.22, issue.43, pp.5878-5883, 2012.
DOI : 10.1002/adma.201202220