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Communication Dans Un Congrès Année : 2014

Detection of high intensity THz radiation by field effect transistors

Dmytro But
  • Fonction : Auteur
  • PersonId : 938994
Mikola V. Sakhno
  • Fonction : Auteur
Jonathan Oden
  • Fonction : Auteur
T. Notake
  • Fonction : Auteur
Nina V. Dyakonova
  • Fonction : Auteur
Dominique Coquillat
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Frederic Teppe
Hiroaki Minamide
  • Fonction : Auteur
Chiko Otani
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Wojciech Knap
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  • PersonId : 1011541

Résumé

Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm2 was studied InGaAs high electron mobility transistors. The observed signal saturation behavior is explained by analogy with current saturation in standard direct currents output characteristics. The theoretical model of terahertz field effect transistor photoresponse was developed shows a good description match with experimental data. Our experimental results show that dynamic range of field effect transistors based terahertz detectors is very high and can extend from mW/cm2 up to kW/cm2.
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Dates et versions

hal-01126627 , version 1 (06-03-2015)

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  • HAL Id : hal-01126627 , version 1

Citer

Dmytro But, Mikola V. Sakhno, Jonathan Oden, T. Notake, Nina V. Dyakonova, et al.. Detection of high intensity THz radiation by field effect transistors. 26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2014, Montpellier, France. pp.1. ⟨hal-01126627⟩
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