Passivation of InP(100) substrates: first stages of nitridation by thin InN surface overlayers studied by electron spectroscopies

Matthieu Petit (1) , Christine Robert-Goumet (1) , Luc Bideux (1) , Bernard Gruzza (1) , V Matolin (2) , S Arabasz (3) , B Adamowicz (3) , D Wawer (4) , M Bugajski (4)

1 LASMEA - Laboratoire des sciences et matériaux pour l'électronique et d'automatique
2 UK - Univerzita Karlova [Praha, Česká republika] = Charles University [Prague, Czech Republic]
3 Department of Microelectronics, Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland
4 Institute of Electron Technology, A1. Lotnikow 32/46, 02-668 Warsaw, Poland

This article investigates the nitridation effect of InP(100) semiconductor surfaces performed by a glow discharge cell (GDS). Electron spectroscopies (AES, ESCA) were used to understand the different steps of this process. An important point is the initial quantity of metallic indium on the InP(100) surfaces. Indeed the indium droplets, created in well known quantity, play the role of precursor. At a relatively low temperature T = 523 K, the system undergoes surface restructuration which includes removal of the In droplets and the elaboration of two InN monolayers. P-N bonds and InN bonds have been detected by the analysis of PLMM and InMNN Auger peaks and In4d ESCA peak. However, the presence or not of metallic indium inside this InN overlayer is crucial for the passivation of the substrate. Ex-situ photoluminescence measurements correlated to the electron spectroscopies results have put in

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Matthieu Petit, Christine Robert-Goumet, Luc Bideux, Bernard Gruzza, V Matolin, et al.. Passivation of InP(100) substrates: first stages of nitridation by thin InN surface overlayers studied by electron spectroscopies. Surface and Interface Analysis, 2005, 37 (7), pp.615-620. ⟨10.1002/sia.2045⟩. ⟨hal-01122582⟩