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Correlation between quality and thickness of µc-Si film deposited below 180°C by PECVD and TFTS characteristics

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https://hal.archives-ouvertes.fr/hal-01121712
Contributor : Katell Kervella <>
Submitted on : Monday, March 2, 2015 - 2:28:55 PM
Last modification on : Thursday, September 9, 2021 - 3:34:16 AM

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  • HAL Id : hal-01121712, version 1

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R. Cherfi, Khalid Kandoussi, Nathalie Coulon, Claude Simon, Tayeb Mohammed-Brahim. Correlation between quality and thickness of µc-Si film deposited below 180°C by PECVD and TFTS characteristics. Conference on Thin Film Transistors ITC 2015, Feb 2015, Rennes, France. ⟨hal-01121712⟩

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