Laser-induced forward transfer of polythiophene-based derivatives for fully polymeric thin film transistors

Abstract : Polymeric thin-film transistors (pTFTs) have been fabricated by pulsed-laser printing of semiconductor and conductor polythiophene-based derivatives. Thin solid layers of semiconducting poly(3,3′″ didodecylquaterthiophene) (PQT-12) have been transferred by a laser-induced forward transfer (LIFT) technique on Si/SiO2 receiver substrates. Optimization of the transfer conditions and of the pixels morphologies has been realized. A marked improvement in the quality of the pixels has been observed, in terms of morphology and structure, by reducing the environmental pressure to 90 mbar during LIFT. Subsequently, poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) has also been laser-printed and used as source/drain electrodes in the transistor configuration. Functional polymeric transistors have been obtained with high field-effect mobility up to 2 × 10−2 cm2 V−1 s−1 together with current modulation of 104.
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https://hal.archives-ouvertes.fr/hal-01108361
Contributor : Catalin Constantinescu <>
Submitted on : Thursday, January 22, 2015 - 3:47:30 PM
Last modification on : Thursday, January 18, 2018 - 1:49:44 AM

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Ludovic Rapp, Catalin Constantinescu, Philippe Delaporte, Anne Patricia Alloncle. Laser-induced forward transfer of polythiophene-based derivatives for fully polymeric thin film transistors. Organic Electronics, Elsevier, 2014, 15 (8), pp.1868-1875. ⟨10.1016/j.orgel.2014.04.029⟩. ⟨hal-01108361⟩

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