Effective field and universal mobility in high-k metal gate UTBB-FDSOI devices

Olivier Nier (1, 2, 3, 4) , Denis Rideau (1) , Antoine Cros (1) , Frédéric Monsieur (1) , Gérard Ghibaudo (2) , Raphael Clerc (5) , Jean-Charles Barbé (3) , Clément Tavernier (1) , Hervé Jaouen (1)

1 ST-CROLLES - STMicroelectronics [Crolles]
2 IMEP-LAHC - Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
4 DIEGM
5 LHC - Laboratoire Hubert Curien

This paper aims at reviewing experimental and theoretical behaviors of universal mobility in high-k metal gate UTBB-FDSOI devices. Based on split-CV mobility measurements, the parameter η, characterizing the effective field, has been extracted for a large range of back voltages and temperatures in devices with various equivalent oxide thicknesses. We demonstrated that a nearly universal trend for the mobility with respect to the effective field can be obtained in the front inversion regime but is difficult to obtain in the back channel inversion regime. Keywords—FDSOI, universal mobility, effective field, coefficient η.

Mots clés: coefficient η; silicon transistor mobility; FDSOI universal mobility; effective field

Domaines: Micro et nanotechnologies/Microélectronique

Olivier Nier, Denis Rideau, Antoine Cros, Frédéric Monsieur, Gérard Ghibaudo, et al.. Effective field and universal mobility in high-k metal gate UTBB-FDSOI devices. 27th International Conference on Microelectronic Test Structures (ICMTS), Mar 2014, Udine, Italy. pp.8 - 13, ⟨10.1109/ICMTS.2014.6841460⟩. ⟨hal-01102474⟩