Design, Characterization and Analysis of a 0.35 μm CMOS SPAD

Abstract : Most of the works about single-photon detectors rely on Single PhotonAvalanche Diodes (SPADs) designed with dedicated technological processes in order toachieve single-photon sensitivity and excellent timing resolution. Instead, this paperfocuses on the implementation of high-performance SPADs detectors manufactured in astandard 0.35-micron opto-CMOS technology provided by AMS. We propose a series oflow-noise SPADs designed with a variable pitch from 20 μm down to 5 μm. This opens thefurther way to the integration of large arrays of optimized SPAD pixels with pitch of a fewmicrometers in order to provide high-resolution single-photon imagers. We experimentallydemonstrate that a 20-micron SPAD appears as the most relevant detector in terms ofSignal-to-Noise ratio, enabling emergence of large arrays of SPAD.
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Sensors, MDPI, 2014, 14 (2), pp.22773-22784. <>. <10.3390/s141222773>
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Dernière modification le : jeudi 19 janvier 2017 - 01:03:33
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Khalil Jradi, Denis Pellion, Dominique Ginhac. Design, Characterization and Analysis of a 0.35 μm CMOS SPAD. Sensors, MDPI, 2014, 14 (2), pp.22773-22784. <>. <10.3390/s141222773>. <hal-01093006>



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