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A physical prediction model issued from TCAD investigations for single event burnout in power MOSFETs

Abstract : This paper investigates SEB physical/device mechanisms in power MOSFETs, and proposes SEB prediction model. Investigations relied on 2D TCAD simulations. Calculated SEB risk for IRF360 is consistent with ground experimental values and in-flight data.
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https://hal.archives-ouvertes.fr/hal-01091195
Contributor : Frédéric Darracq <>
Submitted on : Thursday, December 4, 2014 - 6:35:01 PM
Last modification on : Thursday, January 11, 2018 - 6:21:06 AM

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Siconolfi Sara, Hubert Guillaume, Artola Laurent, Frédéric Darracq, David Jean Pierre. A physical prediction model issued from TCAD investigations for single event burnout in power MOSFETs. 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Sep 2013, Oxford, United Kingdom. pp.1-4, ⟨10.1109/RADECS.2013.6937442⟩. ⟨hal-01091195⟩

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