A physical prediction model issued from TCAD investigations for single event burnout in power MOSFETs

Abstract : This paper investigates SEB physical/device mechanisms in power MOSFETs, and proposes SEB prediction model. Investigations relied on 2D TCAD simulations. Calculated SEB risk for IRF360 is consistent with ground experimental values and in-flight data.
Type de document :
Communication dans un congrès
14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Sep 2013, Oxford, United Kingdom. IEEE, Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems, pp.1-4, 2013, Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems. 〈10.1109/RADECS.2013.6937442〉
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https://hal.archives-ouvertes.fr/hal-01091195
Contributeur : Frédéric Darracq <>
Soumis le : jeudi 4 décembre 2014 - 18:35:01
Dernière modification le : vendredi 5 décembre 2014 - 01:06:23

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Siconolfi Sara, Hubert Guillaume, Artola Laurent, Frédéric Darracq, David Jean Pierre. A physical prediction model issued from TCAD investigations for single event burnout in power MOSFETs. 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Sep 2013, Oxford, United Kingdom. IEEE, Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems, pp.1-4, 2013, Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems. 〈10.1109/RADECS.2013.6937442〉. 〈hal-01091195〉

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