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Analysis of Short-Term NBTI Effect on the Single-Event Upset Sensitivity of a 65nm SRAM using Two-Photon Absorption

Abstract : We used two-photon absorption laser testing to characterize the effect of short-term NBTI aging on the SEU sensitivity of 65 nm CMOS SRAM cell. Results indicate a fast increase of SEU sensitivity due to aging.
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https://hal.archives-ouvertes.fr/hal-01091193
Contributor : Frédéric Darracq <>
Submitted on : Thursday, December 4, 2014 - 6:21:40 PM
Last modification on : Thursday, July 25, 2019 - 4:34:15 PM

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El Moukthari Issam, Vincent Pouget, Frédéric Darracq, Camille Larue, Dean Lewis, et al.. Analysis of Short-Term NBTI Effect on the Single-Event Upset Sensitivity of a 65nm SRAM using Two-Photon Absorption. 14th European Conference on Radiation and Its Effects on Components and Systems, Sep 2013, Oxford, United Kingdom. pp.1-6, ⟨10.1109/RADECS.2013.6937408⟩. ⟨hal-01091193⟩

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