Analysis of Short-Term NBTI Effect on the Single-Event Upset Sensitivity of a 65nm SRAM using Two-Photon Absorption

Abstract : We used two-photon absorption laser testing to characterize the effect of short-term NBTI aging on the SEU sensitivity of 65 nm CMOS SRAM cell. Results indicate a fast increase of SEU sensitivity due to aging.
Type de document :
Communication dans un congrès
14th European Conference on Radiation and Its Effects on Components and Systems, Sep 2013, Oxford, United Kingdom. IEEE, Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems, pp.1-6, 2013, Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems. <10.1109/RADECS.2013.6937408>
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https://hal.archives-ouvertes.fr/hal-01091193
Contributeur : Frédéric Darracq <>
Soumis le : jeudi 4 décembre 2014 - 18:21:40
Dernière modification le : vendredi 5 décembre 2014 - 01:06:23

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El Moukthari Issam, Vincent Pouget, Frédéric Darracq, Camille Larue, Dean Lewis, et al.. Analysis of Short-Term NBTI Effect on the Single-Event Upset Sensitivity of a 65nm SRAM using Two-Photon Absorption. 14th European Conference on Radiation and Its Effects on Components and Systems, Sep 2013, Oxford, United Kingdom. IEEE, Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems, pp.1-6, 2013, Proceedings of the 14th European Conference on Radiation and Its Effects on Components and Systems. <10.1109/RADECS.2013.6937408>. <hal-01091193>

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