New insight on the frequency dependence of TDDB in high-k/metal gate stacks

Abstract : This paper deals with the oxide breakdown (BD) under positive gate voltage in nMOS Devices. First, bulk current is shown to be more sensitive than gate current for breakdown event detection. Then, since test interruption is shown to induce possible error in TBD evaluation, a methodology with an on the fly detection of breakdown is proposed for both DC and AC stresses. Finally, a discussion on the impact of charge trapping/detrapping is opened.
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https://hal.archives-ouvertes.fr/hal-01078341
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Submitted on : Tuesday, October 28, 2014 - 4:43:10 PM
Last modification on : Wednesday, April 3, 2019 - 12:00:10 PM

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Anas Bezza, Mohammad Rafik, Daniel Roy, X. Federspiel, Pascal Mora, et al.. New insight on the frequency dependence of TDDB in high-k/metal gate stacks. IRW 2013, Oct 2013, South Lake Tahoe, CA, United States. 2013, 〈10.1109/IIRW.2013.6804142〉. 〈hal-01078341〉

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