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An analytical model of back-gate coupling effects in vertical double-gate SOI MOSFETs

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https://hal.archives-ouvertes.fr/hal-01068009
Contributor : Brigitte Rasolofoniaina <>
Submitted on : Wednesday, September 24, 2014 - 3:27:01 PM
Last modification on : Friday, June 18, 2021 - 11:50:12 AM

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  • HAL Id : hal-01068009, version 1

Citation

Y. Guo, F. Liu, S. Chang, J. Yao, S. Cristoloveanu. An analytical model of back-gate coupling effects in vertical double-gate SOI MOSFETs. EuroSOI 2013, Jan 2013, Paris, France. pp.P2.1. ⟨hal-01068009⟩

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