Waveguide saturable absorbers at 1.55 mu m based on intraband transitions in GaN/AlN QDs
Résumé
We report on the design, fabrication and optical characterization of GaN/AlN quantum-dot-based waveguides for all-optical switching via intraband absorption saturation at 1.55 mu m. The transmittance of the TM-polarized light increases with the incident optical power due to the saturation of the s-p(z) intraband absorption in the QDs. Single-mode waveguides with a ridge width of 2 mu m and a length of 1.5 mm display 10 dB absorption saturation of the TM-polarized light for an input pulse energy of 8 pJ and 150 fs. (C) 2013 Optical Society of America