Lifetime degradation on n-type wafers with boron-diffused and SiO2/SiN-passivated surface

Clémentine Renevier (1) , Erwann Fourmond (1) , Maxime Forster (2) , Stéphanie Parola (1) , Marine Le Coz (1) , Erwan Picard (3)

1 INL - PV - INL - Photovoltaïque
2 Apollon Solar - Apollon Solar
3 Irysolar

We observe minority carrier lifetime degradation in n-type wafers with boron-diffused surface and SiO2/SiN pas-sivation when exposed to illumination or thermal aging. This degradation is not observed on control wafers with phosphorus-diffused surfaces and identical passivation under the same treatment. Boron-diffused wafers with Si-rich SiN or Al2O3 passivation do not degrade either. Both boron-diffused layer and SiO2/SiN are thus necessary to observe this degradation. Experiments on different aging conditions indicate that the degradation is due to a thermal effect accelerated by injection of excess carriers.

Mots clés: boron diffusion; lifetime degradation; n-type silicon

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Electronique

Clémentine Renevier, Erwann Fourmond, Maxime Forster, Stéphanie Parola, Marine Le Coz, et al.. Lifetime degradation on n-type wafers with boron-diffused and SiO2/SiN-passivated surface. 4th International Conference on Crystalline Silicon Photovoltaics (SiliconPV 2014), Mar 2014, s-Hertogenbosch, Netherlands. pp.280-286, ⟨10.1016/j.egypro.2014.08.082⟩. ⟨hal-01060950⟩