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Sensitivity enhancement of a flexible MEMS strain sensor by a field effect transistor in an all organic approach

Abstract : We report a low-cost piezoresistive nanocomposite based organic micro electro mechanical system (MEMS) strain sensor that has been combined to an organic field effect transistor (OFET) with the objective of amplifying the sensitivity of the sensor. When the MEMS cantilever is strained by a mechanical deflection, the resulting variation of resistivity influences the gate voltage (VGS) of the OFET and, hence, changes the drain current (IDS) of the transistor. The present combination allows an enhancement of sensitivity to strain by a factor 3.7, compared to the direct detection of resistance changes of the nanocomposite. As a consequence, a low limit of detection of 24 ppm has been estimated in terms of strain transduction efficiency. Furthermore, the organic microsystem exhibits a short response time and operates reversibly with an excellent robustness.
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Submitted on : Thursday, November 13, 2014 - 2:45:22 PM
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Damien Thuau, Mamatimin Abbas, Sylvain Chambon, Pascal Tardy, Guillaume Wantz, et al.. Sensitivity enhancement of a flexible MEMS strain sensor by a field effect transistor in an all organic approach. Organic Electronics, Elsevier, 2014, 15, pp.3096-3100. ⟨10.1016/j.orgel.2014.08.063⟩. ⟨hal-01059848⟩

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