InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2014

InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

Résumé

We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective area molecular beam epitaxy of InAs is used to define the area of the diodes down to submicron dimensions. A peak current density up to 1.3 MA/cm2 is achieved.
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Dates et versions

hal-01059835 , version 1 (02-09-2014)

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L. Desplanque, Xianglei Han, Maria Fahed, Vinay K. Chinni, David Troadec, et al.. InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate. 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014, 2014, Montpellier, France. paper Mo-C1-6, 2 p., ⟨10.1109/ICIPRM.2014.6880530⟩. ⟨hal-01059835⟩
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