InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

Abstract : We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective area molecular beam epitaxy of InAs is used to define the area of the diodes down to submicron dimensions. A peak current density up to 1.3 MA/cm2 is achieved.
Document type :
Conference papers
Complete list of metadatas

https://hal.archives-ouvertes.fr/hal-01059835
Contributor : Collection Iemn <>
Submitted on : Tuesday, September 2, 2014 - 9:44:07 AM
Last modification on : Tuesday, February 5, 2019 - 12:12:29 PM

Identifiers

Citation

Ludovic Desplanque, Xianglei Han, Maria Fahed, Vinay K. Chinni, David Troadec, et al.. InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate. 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014, 2014, Montpellier, France. paper Mo-C1-6, 2 p., ⟨10.1109/ICIPRM.2014.6880530⟩. ⟨hal-01059835⟩

Share

Metrics

Record views

276