Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission

Suk-Min Ko (1) , Ho-Sang Kwack (1) , Chunghyun Park (1) , Yang-Seok Yoo (1) , Soon-Yong Kwon (2) , Hee-Jin Kim (2) , Euijoon Yoon (2) , Daniel Le-Si Dang (3) , Yong-Hoon Cho (1)

1 Department of Physics and Graduate School of Nanoscience and Technology
2 Department of Materials Science and Engineering
3 NEEL - NPSC - Nanophysique et Semiconducteurs

Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.

Suk-Min Ko, Ho-Sang Kwack, Chunghyun Park, Yang-Seok Yoo, Soon-Yong Kwon, et al.. Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission. Applied Physics Letters, 2013, 103 (22), pp.222104. ⟨10.1063/1.4833917⟩. ⟨hal-01059024⟩