Helium interaction with tungsten surface at low incident energy and low ion fluxes

Lucile Pentecoste (1) , Anne Lise Thomann (1) , Pierre Desgardin (2) , Taieb Belhabib (2) , Thomas Lecas (1) , Amaël Caillard (1) , Pascal Brault (1) , M.-F. Barthe (2)

1 GREMI - Groupe de recherches sur l'énergétique des milieux ionisés
2 CEMHTI - Conditions Extrêmes et Matériaux : Haute Température et Irradiation

In order to study helium insertion process in tungsten, an ICP-RF plasma source was developped. Implantation conditions are chosen not to induce sputtering of the substrate and to observe the defect formation due to the implanted atoms. Low ion fluxes are reached and energy of the ions is evaluated to be between 270 and 350 eV from various diagnostics. First materials characterizations showed a saturation phenomenon of the implanted dose with time and monovacancy defect formation.

Domaines: Plasmas

Lucile Pentecoste, Anne Lise Thomann, Pierre Desgardin, Taieb Belhabib, Thomas Lecas, et al.. Helium interaction with tungsten surface at low incident energy and low ion fluxes. XXII Europhysics Conference on Atomic and Molecular Physics of Ionized Gases (ESCAMPIG), Jul 2014, Greifswald, Germany. pp.HT5. ⟨hal-01058488⟩