AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by Plasma-Enhanced ALD

Richard Meunier (1) , Alphonse Torres (1) , Erwan Morvan (1) , Matthew Charles (1) , P. Gaud (1) , Frédéric Morancho (2)

1 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
2 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie

In this work we evaluate the influence of the Al2O3 ALD deposition technique on AlGaN/GaN MIS-HEMT structures. It has been found that using O2 plasma as oxidizer instead of water could increase the threshold voltage considerably while greatly reducing gate leakage current. C(V) measurements have shown a very fast on/off transition even at 1kHz, with low frequency dispersion, while a record slope of 80mA/ decades was achieved between the on and off states through Id(Vg) measurements. Gate leakage currents were also drastically reduced with a measured average of 1e-11A/mm for a drain-source bias of 5V.

Mots clés: Metal insulator semiconductor high electron mobility transistor; AlGaN/GaN heterostructure; Plama enhanced atomic layer deposition; Gate-leakage current; Threshold voltage

Domaines: Electronique

Richard Meunier, Alphonse Torres, Erwan Morvan, Matthew Charles, P. Gaud, et al.. AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by Plasma-Enhanced ALD. Microelectronic Engineering, 2013, 109, pp.378-380. ⟨10.1016/j.mee.2013.04.020⟩. ⟨hal-01054125⟩