Edge state in epitaxial nanographene on 3C-SiC(100)/Si(100) substrate

E. Velez-Fort (1, 2) , M. G. Silly (3) , R. Belkhou (3) , A. Shukla (2) , F. Sirotti (3) , A. Ouerghi (1)

1 LPN - Laboratoire de photonique et de nanostructures
2 IMPMC - Institut de minéralogie, de physique des matériaux et de cosmochimie
3 SSOLEIL - Synchrotron SOLEIL

Epitaxial nanographene grown on SiC substrate is of great interest for electronic and optoelectronic applications. The shape and the size of nanographene dictates its electrical, optical, magnetic, and chemical properties including possible edge states and quantum confinement. Here, we report the epitaxial growth of nanographene on 3C-SiC(100) on silicon substrates. Raman spectroscopy determines the nanographene size to be around 20 nm, making it an ideal high edge density sample. Near edge x-ray absorption fine structure of nanographene reveals the appearance of an additional state located at the Fermi level, interpreted as an empty state corresponding to graphene edges

Mots clés: GRAPHENE; GRAPHITE; RIBBONS; GROWTH; MODE

Domaines: Physique Quantique [quant-ph]

E. Velez-Fort, M. G. Silly, R. Belkhou, A. Shukla, F. Sirotti, et al.. Edge state in epitaxial nanographene on 3C-SiC(100)/Si(100) substrate. Applied Physics Letters, 2013, 103 (8), pp.083101. ⟨10.1063/1.4818547⟩. ⟨hal-01053514⟩