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Anodic bonded 2D semiconductors: from synthesis to device fabrication

Abstract : Two-dimensional semiconductors are increasingly relevant for emergent applications and devices, notably for hybrid heterostructures with graphene. We fabricate few-layer, large-area (a few tens of microns across) samples of the III-VI semiconductors GaS, GaSe and InSe using the anodic bonding method and characterize them by simultaneous use of optical microscopy, atomic force microscopy and Raman spectroscopy. Two-terminal devices with a gate are constructed to show the feasibility of applications based on these.
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https://hal.archives-ouvertes.fr/hal-01053499
Contributor : Danielle Thomas <>
Submitted on : Thursday, July 31, 2014 - 11:07:14 AM
Last modification on : Saturday, March 28, 2020 - 2:19:40 AM

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Zhesheng Chen, Karim Gacem, Mohamed Boukhicha, Johan Biscaras, Abhay Shukla. Anodic bonded 2D semiconductors: from synthesis to device fabrication. Nanotechnology, Institute of Physics, 2013, 24 (41), pp.415708. ⟨10.1088/0957-4484/24/41/415708⟩. ⟨hal-01053499⟩

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