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Communication Dans Un Congrès Année : 2014

[Invited] Millimeter-wave noise and power characterization using in situ tuner

Résumé

The advanced micro-and nano-technologies now allows the design of high frequencies integrated circuit with transistors operating at millimeter-wave (MMW) frequencies and beyond. This evolution led us to develop industrial test tools to characterize and validate the models of these transistors. Moreover, the increase in frequency has constraints such as very significant losses in the measurement passive elements (mechanical tuners for instance), cables and probes, and in addition beyond D band, power sensors and noise sources are not available on the measurement tools market. Due to these constraints and the lack of characterization tools at these frequencies, we study the direct integration on silicon of very high frequencies bench for noise and power characterization. The noise figure and load pull characterizations are based on the use of an impedance synthesizer (impedance tuner). Nevertheless, the features of those tuners are not the same versus the measurement objectives.
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Dates et versions

hal-01044780 , version 1 (24-07-2014)

Identifiants

  • HAL Id : hal-01044780 , version 1

Citer

Thomas Quemerais, Daniel Gloria, Sandrine Oeuvrard, Christophe Gaquière, Francois Danneville, et al.. [Invited] Millimeter-wave noise and power characterization using in situ tuner. 62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WMI - Challenges and advances in wafer-level calibration and characterization of millimeter and sub-millimeter wave devices and systems, 2014, Tampa, FL, United States. ⟨hal-01044780⟩
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