First Assemblies Using Deep Trench Termination Diodes

Fédia Baccar (1) , Loïc Théolier (1) , Stephane Azzopardi (1) , François Le Henaff (1) , Jean-Yves Delétage (1) , Eric Woirgard (1)

1 Fiabilité / Puissance

In this paper, diodes manufactured in 2008, allowing to obtain the first electrical measurements of the Deep Trench Termination (DT2), are analyzed in a reliability purpose. For the first time, assemblies are made using DT2 diodes reported on Direct Bonded Copper (DBC) substrates using silver sintering process in order to confirm the possibility to integrate this technology in future lead-free packaging. Indeed, geometric singularities and different mechanical properties of BenzoCycloButen (BCB) and silicon could weaken the chip. In order to confirm the device electrical stability, passive thermal ageing are achieved. Then, breakdown voltage measurements, optical observations and TCAD-SENTAURUS simulations are investigated in order to provide explanation of the induced phenomenon linked to the aging.

Domaines: Energie électrique

Fédia Baccar, Loïc Théolier, Stephane Azzopardi, François Le Henaff, Jean-Yves Delétage, et al.. First Assemblies Using Deep Trench Termination Diodes. The 26th International Symposium on Power Semiconductor Devices and ICs (ISPSD'14), Jun 2014, Waikoloa, United States. pp.143-146, ⟨10.1109/ISPSD.2014.6855996⟩. ⟨hal-01017522⟩