New termination architecture for 1700 V diamond schottky diode

Houssam Arbess (1) , Karine Isoird (2) , Saleem Hamady (1)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes

New field plate architecture is applied to pseudo vertical diamond Schottky diode. Using several field plate architectures, a TCAD simulation is realized in order to reduce the electric field in the dielectric while maintaining high breakdown voltage. Firstly and after simple variations in the field plate architecture, the breakdown voltage was improved from 1632 V to 2141 V at 700 K. Concerning Emax in the dielectric, we obtained a decreasing of maximum electric field from 57 to 18 MV/cm.

Mots clés: "Diamond"; "TCAD simulation"; "Schottky diode"; "Field plate architecture"; Diamond; TCAD simulation; Schottky diode; Field plate architecture

Domaines: Micro et nanotechnologies/Microélectronique

Houssam Arbess, Karine Isoird, Saleem Hamady. New termination architecture for 1700 V diamond schottky diode. 2013 15th European Conference on Power Electronics and Applications (EPE), Sep 2013, Lille, France. pp.1-8. ⟨hal-01006006⟩