Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers, Diamond and Related Materials, vol.20, issue.3, pp.285-289, 2011. ,
DOI : 10.1016/j.diamond.2011.01.008
URL : https://hal.archives-ouvertes.fr/hal-00739714
High temperature application of diamond power device, Diamond and Related Materials, vol.24, 2012. ,
DOI : 10.1016/j.diamond.2012.01.011
High temperature, high voltage operation of diamond Schottky diode, Diamond and Related Materials, vol.7, issue.2-5, pp.581-584, 1998. ,
DOI : 10.1016/S0925-9635(97)00200-8
Simulation and design of junction termination structures for diamond Schottky diodes, Diamond and related materials, vol.20, pp.729-732, 2011. ,
URL : https://hal.archives-ouvertes.fr/hal-00661491
Développement de briques technologiques pour la réalisation des composants de puissance en diamant monocristallin, 2011. ,
A 3.4 eV potential barrier height in Schottky diodes on boron-doped diamond thin films, Diamond and Related Materials, vol.13, issue.2, pp.292-295, 2004. ,
DOI : 10.1016/j.diamond.2003.10.012