Analysis study of sensitive volume and triggering criteria of SEB in super-junction MOSFETs

Moustafa Zerarka (1) , Patrick Austin (1) , Frédéric Morancho (1) , Karine Isoird (1) , Houssam Arbess (1) , Josiane Tasselli (1)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie

Power MOSFETs are more and more used in atmospheric and space applications. Thus, it is essential to study the influence of the natural radiation environment (NRE) on the electrical behavior of standard and Super-Junction (SJ) MOSFETs. 2D numerical simulations are performed to define the sensitive volume and triggering criteria of SEBs (Single Event Burn-out) for standard and superjunction MOSFETs for different configurations of ionizing tracks. The analysis of the results allows a better understanding of the SEB mechanism in each structure and allows the behaviour and robustness comparison for these two technologies under heavy-ion irradiation

Mots clés: Power MOSFET; Super-Junction MOSFET; SEB; sensitive volume; SOA; TCAD simulations; triggering criteria.; triggering criteria

Domaines: Micro et nanotechnologies/Microélectronique

Moustafa Zerarka, Patrick Austin, Frédéric Morancho, Karine Isoird, Houssam Arbess, et al.. Analysis study of sensitive volume and triggering criteria of SEB in super-junction MOSFETs. International Seminar on Power Semiconductors (ISPS 2012), Aug 2012, Pragues, Czech Republic. 6 p. ⟨hal-01005688⟩