Switching Performance of 65 Volts Vertical N-Channel FLYMOSFETs

Loïc Théolier (1) , Karine Isoird (1) , Henri Tranduc (2) , Frédéric Morancho (1) , Jaume Roig Guitart (2) , Yann Weber (2) , E.N. Stefanov , Jean Michel Reynes

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes

In this paper, the switching performance of 65 Volts vertical N-channel FLYMOSFETs is investigated for the first time and compared to a conventional VDMOSFET. It is shown that measurements of the different capacitances and the gate charge of the two divices are comparable. A 2D simulation study of two equivalent structures (i.e. FLYMOSFET and VDMOSFET exhibiting the same breakdown voltage) confirms that floating islands did not cause parasitic or new phenomenon, in the case of weakly doped islands.

Mots clés: capacitance modeling; gate charge; VDMOSFET; FLYMOSFET; power MOSFET

Domaines: Micro et nanotechnologies/Microélectronique

Loïc Théolier, Karine Isoird, Henri Tranduc, Frédéric Morancho, Jaume Roig Guitart, et al.. Switching Performance of 65 Volts Vertical N-Channel FLYMOSFETs. 8th International Seminar on Power Semiconductors (ISPS'06, Aug 2006, Pragues, Czech Republic. pp.117-122. ⟨hal-01005674⟩