Bright CdSe quantum dot inserted in single ZnSe nanowires

Adrien Tribu (1) , Gregory Sallen (2) , Thomas Aichele (2) , Catherine Bougerol (2) , Régis André (2) , Jean-Philippe Poizat (2) , Serge Tatarenko (2) , Kuntheak Kheng (1)

1 NPSC - Nanophysique et Semiconducteurs
2 NEEL - NPSC - Nanophysique et Semiconducteurs

We report the evidence of CdSe quantum dot (QD) insertion in single defect-free ZnSe nanowire. These nanowires have been grown by molecular beam epitaxy in vapour-liquid-solid growth mode catalysed with gold particles. We developed a two-step process allowing us to grow very thin (from 15 to 5 nm) defect-free ZnSe nanowire on top of a nanoneedle, where all defects are localised. The CdSe QDs are incorporated to the defect-free nanowires part. Owing to the extraction efficiency of the nanowires and the reduced number of stacking fault defects in the two-step-process nanowires, a very efficient photoluminescence is observed even on isolated single nanowire. Time-resolved photoluminescence and correlation photon give evidences that the bright photon emission is related to the CdSe QD

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Adrien Tribu, Gregory Sallen, Thomas Aichele, Catherine Bougerol, Régis André, et al.. Bright CdSe quantum dot inserted in single ZnSe nanowires. Microelectronics Journal, 2009, 40 (2), pp.253-255. ⟨10.1016/j.mejo.2008.07.045⟩. ⟨hal-01002259⟩